週次 |
日期 |
單元主題 |
第1週 |
2/24 |
Course Introduction History and Background Advances in magnetism in late the 20thCentury New magnetic devices |
第2週 |
3/02 |
Basic Electronmagnetism Introduction; Magnetic force; poles and fields; Magnetic dipoles; Ampere's circuital Law; Biot-Savart Law; Magnetic moments Magnetic dipolar energy; Magnetic Flux; Magnetic Induction; Classical Maxwell equations of electomagnetism; Inductance |
第3週 |
3/09 |
Magnetism and magnetic material (I) Origin of magnetism (spin; orbital; spin-orbit coupling); Introduction of magnetic materials (dia-; para-; ferro; anti-ferro; ferri-magnet); Ferromagnet/antiferromagnet bilayer structure; Interlayer exchnage coupling in ferromagnet/metal/ferromagnet multilayer (RKKY interaction; Neel coupling); |
第4週 |
3/16 |
Magnetism and magnetic material (II) Anisotropy energy: (Crystalline; interface/surface; Exchange energy; Zeeman energy) In-plane film and perpendicular film; Magnetization Dynamics (precession); |
第5週 |
3/23 |
Properties of Magnetic nano-structures Edge pole and demagnetizing field; magnetic domains, domain wall, curling, vortex, C/S-state; magnetization behavior under an external field; Stoner-Walfarth model; Switching behavior, switching threshold field; magnetization behavior of a synthetic anti-ferromagnetic film stack |
第6週 |
3/30 |
Magneto-resistance effects Hall effects; AMR; GMR; TMR, MTJ; |
第7週 |
4/06 |
Field-write mode MRAM Field MTJ RAM cell; read signal; write bit cell with magnetic field; Astroid-mode MRAM; Toggle-mode MRAM; Characterization method of MRAM chip write performance; Thermally assisted field write; Multi-transistor cells |
第8週 |
4/13 |
Magnetization dynamics, spin-magnetization interactions Magnetization dynamics, LLG equation; Ferromagnetic resonance; Interaction between polarized free electrons and Magnetization Macrospin model; Spin-torque Transfer properties of spin valve; Spin-torque Transfer properties of MTJ; Spin current, spin pumping, accumulation, and effective damping |
第9週 |
4/20 |
Spin-torque transfer mode MRAM (I) Spin transfer mode MRAM cell; Spin-transfer torque and switching threshold current density; Stochastic property of magnetic switching; Abnormal switching behavior; Tunnel barrier reliability; |
第10週 |
4/27 |
Spin-torque transfer mode MRAM (II) Circuit model; memory cell operation; read-write operation window; Data retention; Thermal stability of STT memory chip; |
第11週 |
5/04 |
Other switching modes MRAM Current-driven domain wall motion mode –physics, devices VCAM mode –physics, application to memory devices Precession mode -physics, devices Spin Hall effect mode – physics, devices |
第12週 |
5/11 |
Apparatus principles; memory chip design, statistics, error handling Film/memory device characterization and apparatus Apparatus principles; VSM – working principle MOKE – working principle CIPT – working principle TDDB; Data retention; memory chip design; statistics; error handling |
第13週 |
5/18 |
Magnetoresistive sensor Introduction to theory Hall effect AMR GMR TMR Schematic & circuitry: GMR as an example Microfabrication Applications |
第14週 |
5/25 |
Applications of magnetic tunnel junction technology Memory landscape; standalone memory; Embedded in CMOS SoC; Endurance vs data retention requirement In TCAM, FPGA, other embedded applications Chip power management; Nv Logic; RF oscillator (ST) |
第15週 |
6/01 |
HDD, Spin-FET, Hall/Spin Hall devices/RF oscillator/logic elements Hard Disk Drive HDD, evolution; Recording medium; Sensors and write head; Electronics; Mn:GaAs Logic devices RF oscillator (ST) |
第16週 |
6/08 |
break: team design projects |
第17週 |
6/15 |
Students Projects Presentation, team leader report |